Conferences

• O. Katz, D. Mistele, J. Salzman and G. Bahir “The Effect of LT-GaN Capping on the DC and Transient Performance of AlGaN/GaN HFET Devices” Int. Conf. Nitride Semicond. ICNS-6, Aug. 28-Sept 2, 2005, Bremmen, Germany.
• O. Katz, G. Bahir, and J. Salzman “Improved Persistent Effects in InAlN/GaN FET” Int. Conf. Nitride Semicond. ICNS-6, Aug. 28-Sept 2, 2005, Bremmen, Germany.

• P. Olivero, S. Rubanov, P. Reichart, B. Gibson, S. Prawer, D. N. Jamieson, and J. Salzman “Fabrication of three-dimensional micro-structures in single crystal diamond using a focused-ion-beam assisted lift-off technique” Diamond and Related Materials, Tolouse, France, Sept. 12-16, 2005.

• G. Sarusi, O. Moshe, S. Khatsevich, D. Rich, J. Salzman, B. Meyler, M. Shandalov, and Y. Golan “Cathodoluminescence imaging and spectroscopy study of the thermal quenching of luminescence in AlN/Si” Israel Physical Society Metting, Haifa, Dec.9, 2004.

• David Mistele, O. Katz, G. Bahir, and Joseph Salzman, “The Decisive Role of Surface States and their Manipulation on AlGaN/GaN-based Transistor Devices” COMMAD-2004, Brisbanne, Australia, 2004.

• Oded Katz, David Mistele, G. Bahir, and Joseph Salzman, “Persistent photo-effects in Nitride-based electronic devices” COMMAD-2004, Brisbanne, Australia, 2004.

• O. Katz, D. Mistele, B. Meyler, G. Bahir, and J. Salzman ” Polarization engineering of InAlN/GaN HFET and the effect on DC and RF performance”, (IEDM2004) International Electron Device Meeting, San-Francisco, USA (2004).

• S. Zamir, O. Steinberg, U. Tisch, J. Salzman, and E. Zolotoyabko “Simulation of X-Ray Diffraction Profiles in Imperfect Multilayers by Direct Wave Summation” 7th Biennial conf. On High Resolution X-Ray Diffraction and Imaging (XTOP 2004), September 7-10, 2004.

• O. Skorka and J. Salzman “Propagation Loss in GaN-based Ridge Waveguides Fabricated by Selectrive Area Growth” Int. Workshop Nitride Semicond., Pittsburg, July 19-23, 2004.
• O. Katz, D. Mistele, A. Horn, G. Bahir, and J. Salzman, “The Dynamics of Persistent Photo-effects in AlGaN/GaN based HFET” Int. Workshop Nitride Semicond., Pittsburg, July 19-23, 2004.
• D. Mistele, O. Katz, G. Bahir, and J. Salzman, “Impact of Native Oxides at the Surface of HFET Devices” Int. Workshop Nitride Semicond., Pittsburg, July 19-23, 2004.
• U. Tisch, E. Finkman, S. Prawer, and J. Salzman “The Effect of N-nano-clustering on the Phonon Modes of GaAsN” Physics of Light-Matter Coupling in Nanostructures (PLMCN-3), Sicily, Oct. 1-4, 2003.”
• J. Salzman and O. Katz “”Photonic Crystal Heterostructure Waveguides” Physics of Light-Matter Coupling in Nanostructures (PLMCN-3), Sicily, Oct. 1-4, 2003.
• J. Salzman, G. Bahir, O. Katz, and A. Horn “Persistent Effects, Stretched Exponentials, and Trapping in Semiconductors” Physics of Light-Matter Coupling in Nanostructures (PLMCN-3), Sicily, Oct. 1-4, 2003.
• O. Kreinin, G. Bahir, and J. Salzman “Growth of GaN and InGaN layers by Rapid Thermal MOCVD” 5th Intern. Conf. Nitride Semicond.(ICNS-5), Nara, Japan, May 19-23, 2003.
• O. Skorka, S. Zamir, and J. Salzman “Coupled Cavity Effects in GaN Lasers” 5th Intern. Conf. Nitride Semicond. (ICNS-5), Nara, Japan, May 19-23, 2003.
• O. Katz, A. Horn, G. Bahir, and J. Salzman ” AlGaN/GaN Heterojunction FET mobility measurement for non-uniform channel mobility”. 5th Intern. Conf. Nitride Semicond. (ICNS-5), Nara, Japan, May 19-23, 2003.
• J. Salzman, S. Prawer, B. Meyler, Y. Golan, M. Shandalov, R. Sauer, and N. Teofilov ” Reduction of Oxigen Contamination in AlN” To be presented at the 5th Intern. Conf. Nitride Semicond., Nara, Japan, May 19-23, 2003.
• O. Kreinin, G. Bahir, and J. Salzman “Growth of GaN-GaInN Layers by Rapid Thermal MOCVD” Material Research Society Fall Meeting (MRS), Boston, 2002.
• O. Katz, A. Horn, V. Garber, B. Meyler, G. Bahir, and J. Salzman “AlGaN-GaN Heterojunction Fat FET drift mobility measurements and voltage dependencies” Material Research Society Fall Meeting (MRS), Boston, 2002.
• U. Tisch, E. Finkman, and J. Salzman “The Anomalous Band Bowing in GaAsN” Procced of “International Workshop on Nitride Semiconductors” 22-25 July 2002, Aachen, Germany.
• O. Kreinin, G. Bahir, and J. Salzman “Rapid Thermal MOCVD Growth of GaN Layers” “International Workshop on Nitride Semiconductors” 22-25 July 2002, Aachen, Germany.
• Y. Golan 1, F. Wu 1, S. Zamir 2, B. Meyler 2 and J. Salzman “Microstructure and Optical Properties of MOCVD GaN Deposited using Lateral Confined Epitaxy”  4th  International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED-4) March 2002, Cordoba, Spain.
• J. Salzman, U. Tisch and E. Finkman “The fine structure of high critical points in GaAsN” Int. Narrow Gap Nitride Workshop, Singapore, Oct 7-11, 2001.
• S.M.Hearne, D.N. Jamieson, C.Yang, S.Prawer, J.Salzman and O.Katz, “Electrical Characteristics of Proton Irradiated AlGaN Devices”, 15th International Conference on Ion Beam Analysis, Cairns, Australia, July 16-20, 2001.
• U. Tisch, B. Meyler, E. Finkman, and J. Salzman “The fine Structure of the E1 and E1D1 Critical Points in GaAsN” The 4th Int. Conf. Nitride Semiconductors, Denver Colorado, July 16-20, 2001.
• O. Katz, B. Meyler, U. Tisch, and J. Salzman “Determination of Bandgap Bowing for AlGaN Alloys” The 4th Int. Conf. Nitride Semiconductors, Denver Colorado, July 16-20, 2001.
• O. Katz, V. Garber, B. Meyler, G. Bahir and J. Salzman “Vertical vs. Lateral GaN Schottky UV Detectors and their Gain Mechanisms” The 4th Int. Conf. Nitride Semiconductors, Denver Colorado, July 16-20, 2001.
• G. Bahir, V. Garber, B. Meyler, and J. Salzman “Electron Transport Anisotropy in GaN and AlGaN/GaN Heterostructures”  The 4th Int. Conf. Nitride Semiconductors, Denver Colorado, July 16-20, 2001.
• S. Zamir, B. Meyler and J. Salzman “Enhanced Photoluminescence from GaN Grown by Lateral confined Epitaxy” The 4th Int. Conf. Nitride Semiconductors, Denver Colorado, July 16-20, 2001.
• S.Zamir, Meylerand J. Salzman, “Crack Free GaN grown on Si-on-Insulator Substrates by Lateral Confined Epitaxy” The 4th Int. Conf. Nitride Semiconductors, Denver Colorado, July 16-20, 2001.
• F. Wu, Y. Golan, S. Zamir, B. Meyler, and J. Salzman “Microstructure of GaN on Si(111) Deposited by Lateral Confined Epitaxy” 35th Meeting of the Israel Society for Microscopy, ISM 2001, Haifa, May 15, 2001.
• U. Tisch, O. Katz, B. Meyler, E. Finkman and J. Salzman “Temperature and Composition Dependence of the  Refractive Index of AlGaN” Int. Workshop on Nitride Compounds IWN-2000,Nagoya, Japan, September 24-27, 2000.
• G. Bahir, V. Greiber, O. Katz, C. Uzan-Saguy, E. Baskin and J. Salzman “Geometrical Magneto-Resistance Measurement of Vertical Conductivity in GaN and Comparison with Lateral Transport” Int. Workshop on Nitride Compounds IWN-2000,Nagoya, Japan, September 24-27, 2000.
• V. Greiber, G. Bahir, E. Baskin, O. Katz and J. Salzman,”Anisotropic Transport Properties of Thin Gan Layers”      Int. Conf. Physics Semicond. 25th ICPS, Osaka, Japan, Sept 17-22, 2000.
• J. Salzman, C. Uzan-Saguy, and R. Kalish “Electrical Transport in GaN: The Influence of Grain Boundaries”, The Fourth European GaN Workshop, Nottingham, 2-5 July 2000.
• S. Zamir, B. Meyler, and J. Salzman “Lateral Confined Epitaxy of GaN on Si (111) Substrates”, The Fourth European GaN Workshop, Nottingham, 2-5 July 2000.
• J. Salzman and G. Bahir “Measurement of Vertical and Lateral Transport in GaN” (Invited Talk), 19th Israel Vacuum Soc. Conf. Holon 12.06.2000.
• U. Tisch, O. Katz, B. Meyler, E. Finkman, and J. Salzman “Temperature and composition dependence of the refractive index of AlGaN”, 19th Israel Vacuum Soc. Conf. Holon 12.06.2000.
• U. Tisch, O. Katz, B. Meyler, E. Finkman, and J. Salzman “Temperature and composition dependence of the refractive index of AlGaN”  International Workshop on Nitride Semiconductors IWN 2000, Nagoya, Japan,24.09.2000-27.09.2000.
• U. Tisch, B. Meyler, R. Brenner, and J. Salzman “Optical and Structural Properties of GaAsN” “1999 Annual Conf. of the Israel Association of Crystal Growth”, Nov. 16, 1999, Rehovot, Israel.
• S. Zamir, B. Meyler, E. Zolotoyabko, and J. Salzman “ Lateral Confined Epitaxy of GaN on Silicon Substrates” “European Workshop on Nitride Semiconductors” E-W-GaN, Nottingham, 02.07.2000-05.07.2000.
• A. Hass Bar-Ilan, S. Zamir, O. Katz, B. Meyler, and J. Salzman “GaN Layer Growth Optimization for High Power Devices”. “The Israel Material Engineering Conference” Dec. 6-7, 1999, Haifa, Israel.
• S. Zamir, B. Meyler, E. Zolotoyabko and J. Salzman,  “MOCVD Growth of GaN on Silicon Substrates”. “The Israel Material Engineering Conference” Dec. 6-7, 1999, Haifa, Israel.
• J. Salzman, B. Meyler, C. Uzan-Saguy, and R. Kalish “Grain Boundaries in GaN and their Impact in Electrical Conductivity” (Invited Talk) “Israel Material Engineering Conference – IMEC” Dec. 6-7, 1999, Haifa, Israel.
• O. Katz, B. Meyler, U. Tisch, A. Berner, and J. Salzman “Determination of the Bandgap Bowing for AlxGa1-xN Alloys”. “1999 Annual Conf. of the Israel Association of Crystal Growth”, Nov. 16, 1999, Rehovot, Israel.
• S. Zamir, B. Meyler, E. Zolotoyabko and J. Salzman “MOCVD Growth of GaN on Si(111) Substrates”. To be presented at the “1999 Annual Conf. of the Israel Association of Crystal Growth”, Nov. 16, 1999, Rehovot, Israel.
• A. Hass Bar-Ilan, S. Zamir, O. Katz, B. Meyler and J. Salzman, “Multiparameter Statistical Design of Experiments for GaN Growth Optimization”. Presented at the “3rd Int. Conf. on Nitride Semiconductors”, July 5-9, 1999, Montpellier, France.
• J. Salzman, I. Shalish, C. Uzan-Sagui, L. Kronik, B. Meyler, R. Kalish and Y. Shapira, “The Effect of Grain Boundaries on Electrical Conductivity in Thin GaN Layers”._Ppresented at the “3rd Int. Conf. on Nitride Semiconductors”, July 5-9, 1999, Montpellier, France.
• U. Tisch, J. Salzman, E. Finkman, G. Bahir, W. van der Stricht, A. Abare, S. Denbars and L. Coldren, “Temperature Dependence of Optical Constants in GaN”, presented at the European Material Research Society Meeting 1998, June 16-19, 1998, Strasbourg, France.
• I. Shalish, L. Kronik, Y. Rosenwaks, U. Tisch and J. Salzman, “Deep Levels and Yellow Luminescences in Undoped GaN”,  presented at the 24th Int. Conf. on the Physics of Semiconductors, ICPS’24, August 2-7, 1998, Jerusalem, Israel.
• I. Shalish, L. Kronik, Y. Rosenwaks and J. Salzman, “Deep Levels in Undoped GaN – A Surface Photo-voltage Spectroscopy Study”, presented at the 12th Int. Conf. on Crystal Growth, ICCG’12, July 26-31, 1998, Jerusalem, Israel.
• D. Zhi, J. Salzman, E. Zolotoyabko, U. Tisch, G. Bahir, S.P. Denbars, “High Resolution X-Ray Diffraction Analysis of MOVPE GaN Grown on Al203″, presented at the 12th Int. Conf. on Crystal Growth, ICCG’12, July 26-31, 1998, Jerusalem, Israel.
• U. Tisch, A. Rotschild, S. Zamir, K. Moreno, D. Zhi, A. Harari, W. van der Stricht, I. Moerman, I. Samid, and J. Salzman, “Surface Morphology and Growth Studies of GaN on Sapphire Deposited by MOCVD”, presented at MELECON’98, May 18-20, 1998, Tel Aviv, Israel.
• U. Tisch, A. Rotschild, S. Zamir, K. Moreno, D. Beckman, A. Harari, I. Samid, and J. Salzman, “Surface Morphology of GaN Films on Sapphire Deposited by MOCVD”, presented at International Workshop on Surface Morphology, Interfaces and Growth of III-Nitrides, Jan. 20-24, 1998, Schloss Ringberg, Germany.
• D.R. Beckman, J. Tisch, J. Salzman, I. Samid, S. Prawer, R. Kalish and D.N. Jamieson, “Electrical Characterization of III-V Nitride Semiconductors Grown by MOCVD”, presented at the 10th AINSE Conf. on Nuclear Techniques, ACT, Australia, 23-26 Nov. 1997.
• J. Salzman and H. Temkin, “III-V Nitride Compounds for Infrared Applications”, 1997 Spring Meeting of E-MRS., June 16-20, Strasbourg, France (invited talk).
• J. Salzman and I. Samid, “GaAsN – A New Material for Opto-electronics on Si Substrates (Invited Talk), 1996 Annual Conference of the Israel Association for Crystal Growth, Jerusalem, Dec. 3, 1996.
• J. Salzman, “GaAsN, A Novel Material for Optical Interconnects”, The 19th Convention of IEEE in Israel, Jerusalem, Nov. 5-6, 1996.
• J.W. Lee, J. Salzman, D. Emerson, J.R. Shealy and J.M. Ballantyne, “Selective Area Growth of GaP on Si by MOCVD” 1995 Mater Res. Soc. Fall Meeting, Boston, Nov 27-Dec. 1, 1995.
• D. Veinger, G. Bahir and J. Salzman, “The Effects of Sulfur Concentration on the Growth Rate of Selective   MOCVD Grown InP”, 7th Int. Conf. on InP and Related Mat., Supporo, Japan, 1995.
• J. Salzman, H. Olesen, A. Moller-Larsen, O. Albrektsen, J. Hanberg, J. Norregaard and B. Tromborg, “The S-bent Waveguide DFB Laser”, 14th IEEE Semiconductor Laser Conf., Maui, Hawaii, Sept. 26-30 (1994).
• J. Salzman, “Selective Epitaxial Growth of III-V Semiconductors Danish Physical Society Annual Meeting, Odense, June 2-3, 1994 (invited talk).
• M. Zahler, E. Cohen, J. Salzman, E. Linder, E. Maayan and L.N. Pfeiffer, “Interface (Tamm) States in GaAs/AlGaAs Bragg Confining Structures”, Proceedings of the 22nd International Conference on the Physics of Semiconductors, Vancouver Canada 1994, p. 2247.
• P. Tiedman-Peterson, J. Salzman and O. Albrektsen, “Application of Selective Area MOVPE for DFB Gratings with Modulated Coupling Coefficient”, Mat. Res. Soc. 1994 Spring Meeting, San Francisco, April 4-8 (1994).
• H. Olesen, J. Salzman, X. Pan and B. Tromborg, “Optimization of DFB Lasers with Chirped or Pitch-Modulated Gratings”, Conference on Lasers and Electro-Optics/Europe 94, Amsterdam, Aug. 28-Sept. 2, 1994.
• O. Albrektsen, J. Salzman, P. Tiedman-Petterson, J. Hanberg, A. Moller-Larsen and J.M. Nielsen, “Gratings for DFB Lasers Formed by Selective Epitaxial Growth”, Sixth Int. Conf. Indium Phosphide and Related Materials, Santa Barbara, California, March 28-31, 1994.
• M. Zahler, E. Cohen, J. Salzman, E. Linder and L.N., Pfeiffer, “Exciton States in GaAs-GaAlAs Bragg Confining Structures Studied by Resonant Scattering”, 3rd Int. Conf. on Optics of Excitons in Confined Syst. Montpelier, 30 Aug-2 Sept. 1993.
• A. Eyal, R. Besserman, E. Maayan, O. Kreinin, J. Salzman,R. Westphalen and K. Heime, “Influence of Ga Concentration in the Ordering Process of GaInP Grown on GaAs”, 9th Int. Conf. on Ternary and Multinary Compounds, Yokohama, Japan, Aug. 1993.
• Zahler, E. Cohen, J. Salzman, E. Linder and L.N. Pfeiffer, “Landau Levels of Bragg Confined Electrons and Holes”, Sixth Int. Conf. of Modulated Semicond. Structures, Garmish-Partenkirchen, Germany, Aug. 23-27, 1993.
• E. Zolotoyabko, E. Jacobsohn, D. Shechtman, B. Kantor and J.Salzman, “X-Ray Diffraction in Crystals Excited by Surface Acoustic Waves”, Ultrasonics International ’93, Vienna, Austria, 6-8 July, 1993.
• E. Maayan, J. Salzman and O. Kreinin, “Photo-Enhanced MOVPE with GaAs Laser Excitation”, 5th European Workshop on MOVPE and Related Growth Techniques, Malm?, Sweden, June 2-4, 1993.
• M. Zahler, E. Cohen, J. Salzman and L.N. Pfeiffer, “GaAs/AlGaAs Bragg Confining Structures: Exciton Mediated Resonant Raman Scattering”, Quantum Electronics and Laser Science Conference, Baltimore, May 2-7, 1993.
• Y. Betser and J. Salzman, “The Modulated Bragg Reflection Waveguide”, European Conference on Integrated Optics, ECIO’93, Neuchatel, Switzerland, April 18-22, 1993.
• M. Zelikson, J. Salzman, K. Weiser and J. Kanicki, “Electro-Optic Effect in Amorphous Hydrogenated Silicon Waveguides”, 21st Int. Conf. on the Physics of Semiconductors, Beijing, China, Aug. 10-14, 1992.
• E. Maayan, O. Kreinin, G. Bahir, J. Salzman, A. Eyal and R. Besserman, “Selective Growth of GaAs/InGaP Heterostructures by PE-OMCVD”, VI Int. Conf. MOVPE, Boston, June 8-11, 1992.
• J. Salzman, O. Kreinin and E. Maayan, “Wavelength Dependence of Photo-Enhanced OMCVD”, 2nd Int. Symp. on Atomic Layer Epitaxy, Rayleigh, June 4-6, 1992.
• M. Zelikson, J. Salzman, K. Weiser and J. Kanicki, “Electro-Optic Effect in an Amorphous Silicon Core Waveguide Structure”, Conference on Lasers and Electro Optics, Anaheim, May 12-14, 1992.
• I. Brener, M. Zahler, G. Lenz, J. Salzman, E. Cohen and L.Peiffer, “Experimental Evidence of Bragg Confinement of Carriers in a Quantum Barrier”, Quantum Electronics and Laser Science Conference, Anaheim, May 12-14, 1992.
• M. Zelikson, K. Weiser, J. Salzman and J. Kanicki, “Determination of Electron and Hole Mobility in a-Si:H from Photo-Electric Effects in a Waveguide Structure”, 14th Int. Conf. on Amorphous Semicond., Science and Technol., Garmisch-Partenkirchen, August 19-23, 1991.
• B. Kantor, S. Zehavi and J. Salzman, “Spatial Energy Confinement and Electrical Response of a Phase  Shifted Surface Acoustic Wave  Resonator”, Ultrasonics International, Le Touquet, France, July 1-4, 1991.
• G. Lenz, J. Salzman, Y. Brenner, L. Pfeiffer, “Photoluminescence Excitation of Bragg Confined Electronic Carriers in a Quantum Barrier”, Conference on Lasers and Electro Optics, Baltimore, May 12-17, 1991.
• E. Baruch, G. Lenz and J. Salzman,  “Cutoff Conditions and Guiding Characteristics of Complex Slab Waveguides”, Integrated Photonic Research Topical Meeting, Monterey, California, April 9-11, 1991.
• J. Salzman, A. Dembo and P. Einziger, “Optimal Design of Tilted Waveguide Optical Amplifiers with Tolerant Antireflecting Coating”, Integrated Photonic Research Topical Meeting, Monterey, California, April 9-11, 1991.
• G. Lenz, J. Salzman, Y. Brener, E. Cohen and L. Pfeiffer, “Observation of Bragg Confinement of Carriers in a Quantum Barrier”, 1st International Conference on Epitaxial Crystal Growth, Budapest, Hungary, April 1-7, 1990.
• G. Lenz and J. Salzman, “Polarization Properties of Bragg Reflection Waveguides”, Topical Meeting on Integr. Photonics Research.  Hilton Head, South Carolina, March 26-28, 1990.
• G. Lenz and J. Salzman, “Bragg Reflection Waveguide Based Directional Couplers”, Annual Meeting of the Optical Society of America, Orlando, Florida, October 15-20, 1989.
• J. Salzman, Yu. L. Khait and R. Besserman, “Gradual Degradation of Semiconductor Lasers–The Influence of Pressure and Uniaxial Strain”, CLEO’ 89, Baltimore, April 24-28, 1989.
• G. Lenz and J. Salzman, “Novel Devices Based on Bragg Reflection Waveguides”, 16th Convention of Electrical and Electronic Engineers in Israel.
• Yu. L. Khait, J. Salzman and R. Besserman, “Kinetic Model for Gradual Degradation in Semiconductor Lasers and Light Emitting Diodes”, 6th Meeting in Israel on Optical Engineering, Tel Aviv, 19-21 December 1988.
• G. Eisips, P.D. Einziger and J. Salzman, “The Plane Wave Spectrum Approach for Tilted Waveguides”, 6th Meeting in Israel on Optical Engineering, Tel Aviv, 19-21 December 1988.
• E. Baruch and J. Salzman, “Evanescent Wave Spectroscopy and Application to Fiber Optics Sensors”, 6th Meeting in Israel on Optical Engineering, Tel Aviv, 19-21 December 1988.
• G. Lenz and J. Salzman, “Bragg Reflection Waveguides and Directional Couplers”, 6th Meeting in Israel on Optical Engineering, Tel Aviv, 19-21 December 1988.
• Y. Khait, J. Salzman and R. Besserman, “Kinetics of Gradual Degradation in Semiconductor Lasers”, Annual Meeting of the Optical Society of America, Santa Clara, California, October 31-November 4, 1988.
• J. Salzman, R. Hawkins, C.E. Zah, S. Menocal and T.P. Lee, “The Tilted Mirror Semiconductor for Laser Amplifier”, CLEO ’88, Anaheim, April 24-29, 1988.
• J. Salzman, “Semiconductor Laser with Quantum Well Structures”, (invited paper ). The Israeli Society for Vacuum Technology 8th Israeli  Vacuum Congress, Haifa, March 28-29, 1988.
• C.E. Zah, J.S. Osinski, C. Caneau, S.G. Menocal, L.A. Leith,  J. Salzman, F.K. Shokoohi and T.P. Lee, “Broadband 1.5?m  InGaAsP Traveling Wave Laser Amplifier with Angled Facets, Eleventh Conference on Optical Fiber Communication, New Orleans, January 22-29, 1988.
• J. Salzman, J. Osinski, R. Bhat, and K. Cummings, “The Cross Coupled Cavity Semiconductor Laser”, CLEO ’87, Baltimore, April 28-May 1, 1987.
• J. Salzman and E. Ribak, “Spatial Coherence Measurements in Laser Arrays and Broad Area Configuration Lasers”, Topical Meeting on Semiconductor Lasers, Albuquerque, NM, February 9-13, 1987.
• A. Larsson, P.A. Andrekson, P. Anderson, S.T. Eng, J. Salzman, and A. Yariv, “High Speed Dual Wavelength Demultiplexing in a Monolithic Superlattice p-i-n Waveguide Detector”, 12th European Conference on Opt. Comm., Barcelona, September 22-25, 1986.
• J. Salzman, A. Larsson, and A. Yariv, “Unstable Resonator Semiconductor Laser Array” Topical Meeting on Integrated and Guided Wave Optics, Atlanta, February  26-28, 1986.
• J. Salzman, R. Lang, and A. Yariv, “Phase Locked Laser Array Formed by Induced Filaments”, OSA Meeting, Washington, DC, October 14-18, 1985.
• J. Salzman, R. Lang, and A. Yariv, “Operation of Laterally Coupled Cavity Semiconductor Lasers”, CLEO ’85, Baltimore, May 21-24, 1985.
• R. Lang, J. Salzman, M. Mittelstein, T. Venkatesan, and A. Yariv,  “Modal Analysis of Unstable Resonator Semiconductor Lasers with Lateral Waveguiding”, CLEO ’85, Baltimore, May 21-24, 1985.
• J. Salzman, R. Lang, M. Mittelstein, T. Venkatesan, and A. Yariv, “Lasing Characteristics of Semiconductor Lasers with New Unstable Resonator Geometries”, CLEO ’85, Baltimore, May 21-24, 1985.
• T. Venkatesan, J. Salzman, M. Mittelstein, R. Lang, and A. Yariv, “Unstable Resonator Semiconductor Lasers”, OSA 1984 Annual Meeting, San Diego, Oct.29-Nov. 2, 1984.
• J. Salzman, T. Venkatesan, S. Margalit, and A. Yariv, “Double Heterostructure Lasers with Facets Formed by a Hybrid Wet and Reactive Ion Etching Technique”, OSA, 1984 Meeting, San Diego, Oct. 29-Nov. 2, 1984.
• E. Kapon, U. Sivan, J. Salzman, R. Arieli, and A. Katzir, “Multi-mode Y-Coupler for Heterodyne Detection”, SPIE 27th Annual Technical Symposium, San Diego, August 21-26, 1983 (SPIE Proceedings, Vol. 438).
• J. Salzman and A. Katzir, “Heterodyne Detection Signal-to-Noise Ratio-A New Approach”, International Conference and School, “Lasers and Applications”, Bucharest, August 30-Sept. 1982.
• R. Arieli, S. Simhony, A. Schoenberg, J. Salzman, E. Kapon, and A. Katzir, NATO ASI, Cargese, 1982.
• S. Simhony, R. Arieli, A. Schoenberg, J. Salzman, and A. Katzir, “Heterodyne Detection Using Silver Halide Fibers”, Israel Physical Society Conference, April 1982.
• J. Salzman, A. Schoenberg, and A. Katzir, “SNR of Heterodyne Detection Systems for Observing Through a Turbulent Atmosphere”, Israel Physical Society Conference, April 1982.
• A. Katzir, S. Simhony, R. Arieli, J. Salzman, A. Schoenberg, and E. Kapon, “Infrared Heterodyning Using Silver Halide Fibers”, SPIE Meeting, Los Angeles, Feb., 1982.
• A. Katzir, A. Arieli, S. Simhony, J. Salzman, and A. Schoenberg, “The Use of PbSnTe Lasers and Detectors and of AgCl Fibers for IR Communications”, Third Conference on Integrated Optics and Optical Fiber Communications (IOOC), April 1981.
• J. Salzman, A. Schoenberg, and A. Katzir, “Coherent Detection of Infrared Signals with Real Time Fourier Processing”, Israel Physical Society Conf., Tel Aviv, April, 1981.
• J. Salzman and G. Shaviv, “The Formation of Cataclysmic Binaries”, Third European Workshop on White Dwarfs, Tel-Aviv, 1978.