Publications

Journal

Papers published from 1989

  • J. Lee, A. Yadav, M. Antia, V. Zaffino, E. Flitsian, L. Chernyak, J. Salzman, B. Meyler, S. Ahn, F. Red and S.j. Pearton, “Low dose 60Co gamma-irradiation effects on electronic carrier transport and DC characteristics of AlGaN/GaN high-electron-mobility transistors”, Rad. Effects in Solids 172, 3-4 (2017).
  • A. Yadav, C. Glasscock, E. Flitsiyan, L. Chernyak, I. Lubomirsky, S. Khodorov, J. Salzman, B. Meyler, C. Coppola, S. Guay, J. Boivin, “Optical and electron beam studies of gamma-irradiated AlGaN/GaN high-electron mobility transistors”, Rad. Effects in Solids 171, 3-4 (2016).
  • A. Lozovik, M. Tordjman, B. Meyler, I. Bayn, J. Salzman and R. Kalish “Non-volatile resonance modes of a photonic cavity in diamond produced by fine tuning”, J. Appl. Phys. 120,163107 (2016).
  • S. Recher, E. Yalon, D. Ritter, I. Riess, J. Salzman, “Dual bipolar resistive switching in the sub-forming regime of HfO2 resistive switching devices”, Solid State Electron. 111, 238-242 (2015).
  • V. Mikhelashvili, P. Padmanabhan, B. Meyler, S. Yofis, G. Atiya, Z. Cohen-Hyams, S. Weindling, G. Ankonina, J. Salzman, W.D. Kaplan and G. Eisenstein, “Optically sensitive devices based on Pt nano-particles fabricated by ALD and embedded in a dielectric stack”, J. Appl. Phys. 118, 134504 (2015).
  • I. Bayn, S. Mouradian, L. Li, J. A. Goldstein, T. Schröder, J. Zheng, E. H. Chen, O. Gaathon, M. Lu, A. Stein, C., A. Ruggiero, J. Salzman, R. Kalish, and Dirk Englund, “Fabrication of triangular nanobeam waveguide networks in bulk diamond using singlecrystal silicon hard masks”, Applied Physics Letters 105, 211101 (2014); doi: 10.1063/1.4902562.
  • V. Mikhelashvili1, B. Meyler, Y. Shneider, S. Yofis, J. Salzman, G. Atiya, T. Cohen-Hyams, G. Ankonina, W. D. Kaplan, M. Lisiansky, Y. Roizin, and G. Eisenstein, “Ultraviolet to near infrared response of optically sensitive nonvolatile memories based on platinum nano-particles and high-k dielectrics on a silicon on insulator substrate”, J. Appl. Phys. 113, 074503 (2013).
  • Bayn, D. Englund, J.Salzman and R. Kalish, “Diamond Photonics – Turning discrete Nano-scale interactions into integrated quantum information processing devices”, (Invited Book Chapter), Photonic Crystals: Technology, Theory and Challenges, Nova, Editor: Donald Claus. (2013).
  • L. Kornblum, B. Meyler, J. Salzman, and M. Eizenberg,”The electrostatics of Ta2O5 in Si-based metal oxide semiconductor devices”, J. Appl. Phys. 113, 074102 (2013).
  • L. Kornblum, B. Meyler, C. Cytermann, S. Yofis, J. Salzman and M. Eizenberg, “Ultrathin dielectric layers for work function engineering in HfO2-based Si metal oxide semiconductor devices” (to be published, 2013).
  • Sh. Michaelson, R. Akhvlediani, I. Milshtein, A. Hoffman,  B. Meyler, J. Salzman, E. Lipp, R. Shima-Edelstein, and Y. Roizin, “The Effect of HfO2 Overlayer on the Thermal Stability of SiGe Substrate”, ECS Solid State Lett. 1, N1-N3 (2012).
  • V. Mikhelashvili, Y. Shneider, B. Meyler, G. Atiya, S.Yofis, T. Cohen-Hyams, W. D. Kaplan, M. Lisiansky, Y. Roizin, J. Salzman, and G. Eisenstein, “Non-volatile memory transistor based on Pt nanocrystals with negative differential resistance”, J. Appl. Phys., 112, 024319 (2012).
  • L. Kornblum, B. Meyler, C. Cytermann, S. Yofis, J. Salzman, and M. Eizenberg, “Investigation of the Band Offsets Caused by Thin Al2O3 Layers in HfO2 Based Metal Oxide Semiconductor Devices”, Appl. Phys. Lett. 100, 062907 (2012).
  • Sh. Michaelson, R. Akhvlediani, I. Milshtein, A. Hoffman, B. Meyler, J. Salzman, E. Lipp, R. Shima-Edelstein, Y. Roizin, A. Stacey, B.C.C. Cowie, “Synchrotron radiation X-ray photoelectron spectroscopy study of initial stages of atomic layer deposited HfOx films formation on silicon and SiGe substrates””, Towerjazz Tech. J. 2, 83 – 89 (2012)
  • E. Yalon, A. Gavrilov, S. Cohen, D. Mistele, B. Meyler, J. Salzman, and D. Ritter, “Resistive Switching in HfO2 probed by a Metal Insulator Semiconductor Bipolar Transistor”, IEEE Electron Device Letters 33, 11 (2012).
  • I. Bayn, B. Meyler, J. Salzman and R. Kalish, “Triangular Cross Section Nanobeam in single Crystal Diamond”, New J. Phys. 13, 025018 (2011).
  • I. Bayn, B. Meyler, Al. Lahav, J. Salzman, R. Kalish, B. A. Fairchild, S. Prawer, M. Barth, O. Benson, T. Wolf, P. Siyushev, F. Jelezko, J. Wrachtrup, “Processing of photonic crystal nanocavity for quantum information in diamond”, Diamond & Related Materials 20, 937-943 (2011).
  • V. Mikhelashvili, B. Meyler, S. Yofis, Y. Shneider, A. Zeidler, J. Salzman, M. Garbrecht, T. Cohen-Hyams, W. D. Kaplan, M. Lisiansky, Y. Roizin, G. Eisenstein, “Non-Volatile Low-Voltage Memory Transistors Based on SiO2 Tunneling and HfO2 Blocking Layers with Charge Storage in Au Nanocrystal”, Appl. Phys. Lett. 98, 212902 (2011).
  • V. Mikhelashvili, B. Meyler, M. Garbrecht, T. Cohen-Hyans, Y. Roizin, M. Lisiansky, Y. Y. Roizin, M. Lisiansky, W.D. Kaplan, Y. Salzman, G. Eisenstein, “The effect of light irradiation on electrons and holes trapping in nonvolatile memory capacitors employing sub 10 nm SiO2–HfO2 stacks and Au nanocrystals”, Microelectronic Engineering, 88, 964-968 (2011).
  • V. Mikhelashvili,_ B. Meyler, M. Garbrecht, S. Yofis, J. Salzman, T. Cohen-Hyams, W. D. Kaplan, Y. Roizin, M. Lisiansky, and G. Eisenstein, “Optical properties of nonvolatile memory capacitors based on gold nanoparticles and SiO2–HfO2 sublayers”, Appl. Phys Lett. 98, 022905 (2011). Selected for the Virtual Jour. Nano-Scale Csience Technol. June 6, 2011.
  • V. Mikhelashvili, G. Eisenstein, B. Meyler, S. Yofis, J. Salzman, M. Garbrecht, T. Cohen-Hyans, W.D. Kaplan, “Temperature induced peculiarities in the characteristics of nonvolatile memory capacitors with double Au nanocrystal and high-k insulator (HfO2 and HfNO/HfTiO) layers on p-Si”, Microelectronic Engineering (to be published 2011).
  • V. Mikhelashvili, G. Eisenstein, B. Meyler, J. Salzman, Y. Roizin, M. Lisiansky, “The effect of light irradiation on electrons and holes trapping in sub 10nm SiO2-HfO2 insulator stacks with Au nanocrystals”, Microelectronic Engineering 88, 964-968 (2011).
  • J.A. Rotchild, A. Shlomo, M. Eizenberg, B. Meyler and J. Salzman, “Properties of atomic Layer Deposited High-K HfO2 Thin Films”, Tower Jazz Technical Journal, 2011.
  • V. Mikhelashvili, B. Meyler, M. Garbrecht, S.Yofis, J.Salzman, T. Cohen-Hyams, W.D. Kaplan, Y. Roizin, M. Lisiansky, G. Eisenstein, “Optical properties of Nonvolatile Memory Capacitors Based on Gold Nano Particles and SiO2-HfO2 Sub-layers”, Appl. Phys. Lett. 98, 022905 (2011).
  • M. Shlafman, Y. Bayn, and J. Salzman “Effect of dielectric constant tuning on a photonic cavity frequency and Q-factor”, Optics Express, 18, 15907-15916 (2010).
  • V. Mikhelashvili, B. Meyler, S. Yofis, J. Salzman, M. Garbrecht, T. Cohen-Hyams, W. D. Kaplan, and G. Eisenstein, “A Nonvolatile Memory Capacitor Based on a Double Gold Nanocrystal Storing Layer and High-k Dielectric Tunneling and Control Layers”, J. Electrochem. Soc., 157, 463-469, (2010).
  • V. Mikhelashvili, B. Meyler, S. Yofis, J. Salzman, M. Garbrecht, T. Cohen-Hyans, W.D. Kaplan, G. Eisenstein, “Nonvolatile memory capacitors based on double Au nanocrystals and HfO2 tunneling and laminate HfNO/HfTiO control high-k insulator layers layers”, ECS Transactions, 25, 6, 465-471, (2009).
  • V. Mikhelashvili, B. Meyler, S. Yoffis, J. Salzman, M. Garbrecht, T. Cohen-Hyams, W.D. Kaplan and G. Eisenstein, “A Nonvolatile Memory Capacitor Based on Au Nanocrystals with HfO2 Tunneling and Blocking Layers”, Appl. Phys. Lett., 95, 023104 (2009).
  • J.C. Zhang, B. Meyler, A. Vardi, G. Bahir, and J. Salzman “Stranski-Krastanov Growth of GaN Quantum dots on alN Template by MOCVD” J. Appl. Phys. 104,044307 (2008).
  • I. Bayn and J. Salzman, “Ultra high-Q photonic crystal nanocavity design: The effect of a low-ε slab material”, Opt. Express 16, 4972-4980 (2008). Selected for Virtual Journal of Quantum Information Volume 8, Issue 5. Selected for Virtual Journal of Nanoscale Science & Technology Vol. 17, Issue 21.
  • I. Bayn and J. Salzman, “High Q photonic crystal nanocavities on diamond for quantum electrodynamics”, European Physics J. Appl. Phys. 37. 19-24 (2007).
  • G. Sarusi, O. Moshe, S. Khatsevich, D. H. Rich, J. Salzman, B. Meyler, M. Shandalov, and Y. Golan “Cathodoluminescence study of micro-crack induced stress relief for AlN films on Si(111) (Journal of Electronic Materials, 35,  L15-L19 (2006).
  • A. Horn, O. Katz, G. Bahir, and J. Salzman  “Surface States and Persistent Photocurrent in GaN HFETs” Semicon. Science and Technol., 21, 933-937 (2006).
  • S. Tomljenovic-Hanic, M. J. Steel, C. M. deSterke, and J. Salzman, “Diamond Based Photonic Crystal Microcavities”, Optics Express, 14, 3556–3562 (2006).
  • P. Olivero, S. Rubanov, P. Reichart, B. C. Gibson, S. T. Huntington, J. R. Rabeau, Andrew D. Greentree, J. Salzman, D. Moore, D. N. Jamieson, S. Prawer, “Characterization of Three-Dimensional Microstructures in Single Crystal Diamond”, Diamond and Related Materials, 15, 1614 (2006).
  • A. Greentree, S. Prawer, and J. Salzman, “Quantum Gate for Q Switching in Monolithic Photonic Bandgap Cavities Containing Two Level Atoms”, Physical Review A 73, 013818 (2006).
  • D. Mistele, O. Katz, G. Bahir, and J. Salzman, “Origin and Engineering of Surface States on AlGaN/GaN-based HFET Devices”, Semicon. Science and Technol.20, 972-978 (2005).
  • S. Zamir, O. Steinberg, U. Tisch, J. Salzman, and E. Zolotoyabko, “Simulation of X-ray diffraction Profiles in Imperfect Multilayers by direct Wave Summation”, J. Phys. D: Appl. Phys. 38, A239 (2005).
  • P. Olivero, S. Rubanov, P. Reichart, B. Gibson, S. Huntington, J. Rabeau, A. D. Greentree, J. Salzman, D. Moore, D. N. Jamieson, S. Prawer, “Ion Beam Assisted Lift-Off Technique for Three-Dimensional Micromachining of Free Standing Single-Crystal Diamond”, Advanced Materials, 17, 2427–2430, 2005.
  • O. Katz, G. Bahir and J. Salzman, “Low Frequency 1/f Noise and Persistent Transients in AlGaN/GaN HFETs”, IEEE Electron Device Lett., 26, 345 (2005).
  • O. Katz, D. Mistele, B. Meyler, G. Bahir, and J. Salzman, “Characteristics of InAlN/GaN High Electron Mobility Field Effect Transistor”, IEEE Trans. Electron Devices, 52, 146, (2005).
  • O. Katz, Y. Roichman, G. Bahir, N. Tesler, andJ. Salzman, “Charge Carrier Mobility in Field Effect Transistors: Analysis of capacitance-conductance measurements”, Semicond. Science and Technol. 20, 90-94 (2005).
  • O. Katz, D. Mistele, B. Meyler, G. Bahir, and J. Salzman, “InAlN/GaN Heterostructure Field-Effect Transistor DC and Small Signal Characteristics”, Electronic Letters, 40, 1304 (2004).
  • O. Katz, G. Bahir, and J. Salzman, “Persistent photo-current in GaN Schottky UV detectors”, Appl. Phys. Lett., 84, 4092, (2004).
  • O. Skorka, B. Meyler, and J. Salzman, “Propagation Loss in GaN-based Ridge Waveguides”, Appl. Phys. Lett., 84, 3801 (2004).
  • J. Salzman and O. Katz, “Photonic Crystal Heterostructure Waveguides”, Phys. Status Solidi (c) 1, 1531-1536, 2004.
  • T. Talercio, R. Intartaglia, B. Gil, P. Lefevre, T. Bretagnon, U. Tisch, E. Finkman, J. Salzman, M. Pinault, M. Laugt, and E. Tournie, “From GaAs:N to oversaturated GaAsN: Analysis of the band gap reduction”, Phys. Rev. B 69, 073303 (2004).
  • U. Tisch, E. Finkman, S. Prawer, and J. Salzman, “The atypical temperature evolution of the phonon modes of GaAsN”, Phys. Status Solidi (c), 1, 1554 (2004).
  • O. Kreinin, G. Bahir, and J. Salzman, “Growth of GaN and InGaN layers by Rapid Thermal MOCVD”, Phys. Status Solidi (c), 0, 2059 (2003).
  • J. Salzman, S. Prawer, B. Meyler, Y. Golana, M. Shandalova, R. Sauerb, N.Teofilov, “Reduction of Oxygen Contamination in AlN”, Phys. Status Solidi (c) 0, 2541, (2003).
  • O. Katz, A. Horn, G. Bahir, and J. Salzman, “Electron Mobility in Two-Dimensional Electron Gas I–Uniform Carrier Density”, IEEE J. Electron Devices, 50, 2002 (2003).
  • O. Skorka and J. Salzman, “Lateral and Longitudinal Coupled Waveguides in Semiconductor Compound Lasers”, Opt. Lett. 28, 1939 (2003).
  • O. Skorka, J. Salzman and S. Zamir, “Coupled Waveguides in GaN-based Lasers” ( J. Opt. Soc. Amer.B 20, 1822 (2003).
  • D. Mistele, A. Horn, O. Katz, T. Rotter, Z. Bougrioua, J. Aderhold, J. Graul, G. Bahir, and J. Salzman; J. Electron Materials 32, 355, (2003).
  • F. Wu, S. Zamir, B. Meyler, J. Salzman, and Y. Golan, “Microstructure of GaN grown by Lateral Confined Epitaxy 2. GaN on Patterned Sapphire”, J. Electron. Mater, 32, 23, (2003).
  • Y. Golan, P. Fini, D. Dahan, F. Wu, S. Zamir, J. Salzman, and J. Speck, “High Quality GaN on Intentionally Roughened C-Sapphire”, Eur. Phys. J. Appl. Phys., 22, 11, (2003).
  • S. Zamir, B. Meyler, and J. Salzman “Reduction of cracks in GaN films grown on Si-on-insulator by lateral confined epitaxy”, J. Crystal Growth 243, 375, ( 2002).
  • U. Tisch, E. Finkman, and J. Salzman, “The Anomalous Band Gap Bowing in GaAsN”, Appl. Phys. Lett, 81, 463, (2002).
  • U. Tisch, E. Finkman, and J. Salzman, “Fine Structure of the E1 and E1+Δ1 Critical Points in GaAsN”, Phys. Rev. B, 65, 153204 (2002).
  • E. Harush, S. Brandon, J. Salzman, and Y. Paz “The Effect of Mass Transfer on the Photoelectrochemical Etching of GaN”, Semicond. Science and Technol. 17, 510 (2002).
  • F. Wu, S. Zamir, B. Meyler, J. Salzman, and Y. Golan, “Microstructure of GaN deposited by Lateral Confined Epitaxy on Patterned Si(111), J. Electron. Mater. 31, 88, (2002).
  • O. Katz, B. Meyler, U. Tisch, and J. Salzman, “Determination of Band-Gap Bowing for GaAlN Alloys”, Phys. Status Solidi (a), 188, 789 (2001).
  • O. Katz, V. Garber, B. Meyler, G. Bahir and J. Salzman, “Vertical vs. Lateral GaN Schottky UV Detectors and their Gain Mechanisms”, Phys. Status Solidi (a) 188, 345, (2001).
  • S. Zamir, B. Meyler, J. Salzman, F. Wu, and Y. Golan, “Enhanced Photoluminescence from GaN grown by Lateral Confined Epitaxy”, J. Appl. Phys., 91, 1191, 2002.
  • O. Katz, V. Garber, B. Meyler, G. Bahir, and J. Salzman, “Anisotropy in Detectivity of GaN Schottky UV detectors”, Appl. Phys. Lett., 80, 347, (2002).
  • Shalish, C.E.M. de Olivera, Y. Shapira, and J. Salzman, “Photo-Hall Spectroscopy study of deep levels in GaN”, Phys. Rev. B. 64, 205313, (2001).
  • O. Katz, V. Garber, B. Meyler, G. Bahir, and J. Salzman, “Gain Mechanism in GaN Schottky UV Detectors, Appl. Phys. Lett., 79, 1417, (2001).
  • S. Zamir, B. Meyler, and J. Salzman, “Laterally Confined Epitaxy of GaN on Silicon Substrates”, J. Cryst. Growth, 230, 345 (2001).
  • H. Tang, J. B. Webb, J. A. Bardwell, S. Raymond, J. Salzman, and C. Uzan-Saguy, “Properties of Carbon Doped GaN”, Appl. Phys. Lett., 78, 757 (2001).
  • U. Tisch, O. Katz, B. Meyler, E. Finkman, and J. Salzman, “The Dependence of the Refractive Index of AlGaN on Temperature and Composition at Elevated Temperatures”, J. Appl. Phys. 89, 2676 (2001).
  • S. Zamir, B. Meyler, and J. Salzman, “Thermal Microcrack Distribution Control in GaN Layers on Si Substrates by Lateral Confined Epitaxy”, Appl. Phys. Lett. 78, 288, (2001).
  • Shalish, L. Burstein, Y. Shapira, and J. Salzman, “Surface States and Surface Oxide in GaN Layers”, J. Appl. Phys., 89, 390 (2001).
  • Hass Bar-Ilan, S. Zamir, O. Katz, B. Meyler, and J. Salzman, “GaN Layer Optimization for High Power Devices”, Mater. Sci. Engineer., A302, 14 (2001).
  • S. Zamir, B. Meyler, E. Zolotoyabko, and J. Salzman, “The effect of AlN buffer layer on the quality of GaN films grown on Si(111) substrates”,  J. Cryst. Growth, 218, 181, (2000).
  • Shalish, L. Kronik, G. Segal, Y. Shapira, M. Eizenberg, and J. Salzman “Yellow Luminescence and Fermi Level Pinning in GaN Layers”, Appl. Phys. Lett, 77, 987, (2000).
  • D. Zhi, U. Tisch, S. Zamir, M. Wei, E. Zolotoyabko and J. Salzman, “Quantitative Analysis of Small Amounts of Cubic GaN Phase in GaN Films Grown on Sapphire”, J. Electron. Mater. 29, 457, (2000).
  • Shalish, L. Kronik, G. Segal, Y. Shapira, S. Zamir, B. Meyler and J. Salzman, “Grain Boundary Controlled Transport in GaN Layers”, Phys.Rev.B. 61, 15573, (2000).
  • J. Salzman, C. Uzan-Saguy, R. Kalish, V. Richter, and B. Meyler, “Thermally Activated Conductivity in Thin GaN Epitaxial Films”, Appl. Phys. Lett., 76, 1431 (2000).
  • Hass Bar-Ilan, S. Zamir, O. Katz, B. Meyler and J. Salzman, “Multiparameter Statistical Design of Experiments for GaN Growth Optimization”. Phys. Status Solidi 176, 313 (1999).
  • J. Salzman, C. Uzan-Sagui, B. Meyler, and R. Kalish, “The Effect of Grain Boundaries on Electrical Conductivity in Thin GaN Layers”. Phys. Status Solidi, 176, 683 (1999).
  • Uzan-Sagui, J. Salzman, R. Kalish, V. Richter, U. Tisch, S. Zamir and S. Prawer, “Electrical Isolation of GaN by Ion Implantation Damage: Experiment and Model”, Appl. Phys. Lett., 74, 2441 (1999).
  • Shalish, L. Kronik, G. Segal, Y. Shapira, Y. Rosenwaks, U. Tisch and J. Salzman, “Yellow Luminescence and Related Deep Levels in Unintentionally Doped GaN Films”, Phys. Rev. B., 59, 9748 (1999).
  • R. Weill, A. Chack, M. Levy, J. Salzman and R. Beserman, “Ordering Dependence of Pyroelectricity in GaxIn1-xP”, J. Appl. Phys., 81, 3729 (1997).
  • J. Salzman and H. Temkin, “III-V-N Compounds for Infrared Applications”,  Mater. Sci and Eng., B50, 148-152 (1997).
  • J.W. Lee, J. Salzman, D. Emerson, J.R. Shealy, J.M. Ballantyne, “Selective Area Growth of GaP on Si by MOCVD”, J. Cryst. Growth, 172, 53, (1997).
  • H. Olesen, J. Salzman, B. Johnson and B. Tromborg, “Single Mode Stability of DFB Lasers with Longitudinal Bragg Detuning”, IEEE Photonic Technol. Lett., 7, 461-463 (1995).
  • J. Salzman, H. Olesen, A. Möller-Larsen, O. Albrektsen, J. Hanberg, Norregaard, B. Johnson and B. Tromborg, “DFB Lasers with an S-bent Waveguide for High Power Single Mode Operation”, IEEE J. Selected Topics in Quantum Electron, Vol. 1, No. 2, pp. 346-355 (1995).
  • E. Maayan, O. Kreinin, D. Veinger, A. Thon, G. Bahir and J. Salzman, “The Role of the Substrate in Photo-Enhanced MOCVD”, Appl. Phys. Lett., 66, 296-298 (1995).
  • M. Zahler, E. Cohen, J. Salzman, E. Linder, E. Maayan and L. N. Pfeiffer, “Exciton Dimensionality and Confinement Studied by Resonant Raman Scattering in GaAs/AlGaAs Bragg Confining Structures and Superlattices”, Phys. Rev. B. 50, 5305-5315 (1994).
  • P. Tiedman-Petterson, J. Salzman and O. Albrektsen, “Selective Area MOVPE for InP-Based Optoelectronic Components”, Physica Scripta, T54, 194-197 (1994).
  • M. Zahler, E. Cohen, J. Salzman, E. Linder and L.N. Pfeiffer, “Landau Levels of Bragg Confined Electrons and Holes”, Solid State Electronics, 37, 1195-1197 (1994).
  • Y. Betser, A. Finigstein, J. Salzman, and D. Ritter, “Transmission Through Abrupt Heterojunction Potential Barriers”, IEEE J. Quantum Electron, 30, 1995-2000 (1994).
  • H. Olesen, J. Salzman, B. Johnson and B. Tromborg, “Single Mode Stability of DFB Lasers with Longitudinal Bragg Detuning”, IEEE Photonic Technol. Lett., 7, 461-463 (1995).
  • J. Salzman, H. Olesen, A. Möller-Larsen, O. Albrektsen, J. Hanberg, Norregaard, B. Johnson and B. Tromborg, “DFB Lasers with an S-bent Waveguide for High Power Single Mode Operation”, IEEE J. Selected Topics in Quantum Electron, Vol. 1, No. 2, pp. 346-355 (1995).
  • H. Lage, J. Salzman, H. Olesen, B. Jonsson, J. Hanberg, Möller-Larsen and O. Albrektsen, “Direct Measurement of the Local Intensity Modulation Response of DFB Lasers”, IEEE Photon. Technol. Lett., 7, 260-262 (1995).
  • M. Zahler, E. Cohen, J. Salzman, E. Linder, E. Maayan and L. N. Pfeiffer, “Exciton Dimensionality and Confinement Studied by Resonant Raman Scattering in GaAs/AlGaAs Bragg Confining Structures and Superlattices”, Phys. Rev. B. 50, 5305-5315 (1994).
  • P. Tiedman-Petterson, J. Salzman and O. Albrektsen, “Selective Area MOVPE for InP-Based Optoelectronic Components”, Physica Scripta, T54, 194-197 (1994).
  • M. Zahler, E. Cohen, J. Salzman, E. Linder and L.N. Pfeiffer, “Landau Levels of Bragg Confined Electrons and Holes”, Solid State Electronics, 37, 1195-1197 (1994).
  • Y. Betser, A. Finigstein, J. Salzman, and D. Ritter, “Transmission Through Abrupt Heterojunction Potential Barriers”, IEEE J. Quantum Electron, 30, 1995-2000 (1994).
  • E. Zolotoyabko, E. Jacobsohn, D. Shechtman, B. Kantor and J. Salzman, “X-Ray Diffraction Study of Surface Acoustic Wave Device under Acoustic Excitation”, J. Appl. Phys., 73, 2343-2346 (1994).
  • G. Coudenys, I. Moerman, G. Vermeire, F. Vermaerke, Y. Zhu, P. Van Daele, P. Demeester, E. Maayan, B. Elsner, J. Salzman and E. Finkman, “Atmospheric and Low Pressure Shadow Masked MOVDE Growth of InGaAs(P)/InP and (In)GaAs/(Ac)GaAs Heterostructure and Quantum Wells”, J. Electron. Materials, 23, 225-232 (1994).
  • Eyal, R. Besserman, S.H. Wei, A. Zunger, E. Maayan, O. Kreinin, J. Salzman, R. Westphalen and K. Heime, “Influence on Ga Concentration on the Ordering Process of GaInP Grown on GaA”, Jpn. J. Appl. Phys. 32, 716-719 (1993).
  • E. Maayan, O. Kreinin, G. Bahir, J. Salzman, A. Eyal and R. Besserman, “Selective Growth of GaAs/InGaP Heterostructures by Photo-Enhanced OMCVD”, J. Cryst. Growth, 135, 23-30 (1994).
  • M. Zahler, E. Cohen, J. Salzman, E. Linder and L.N. Pfeiffer, “Exciton States in GaAs/AlGaAs Bragg Confining Structures Studied by Resonant Raman Scattering”, Phys. Rev. Lett., 71, 420-423 (1993).
  • J. Salzman and E. Maayan, “A Kinetic Model for Photo-Enhanced Organo\-metallic Chemical Vapor Deposition”, Semicond. Science \& Technol., 8, 1094-1100 (1993).
  • J. Salzman, O. Kreinin and E. Maayan, “Wavelength Dependence of Photo-Enhanced Organometallic Chemical Vapor Deposition”, J. Thin Solid Films, 225, 91-95 (1993).
  • M. Zelikson, J. Salzman, K. Weiser and J. Kanicki, “Electro-Optic Effect in Hydrogenated Amorphous Silicon Waveguides”, Appl. Phys. Lett. 61, 1664 (1992).
  • M. Zahler, I. Brener, G. Lenz, J. Salzman, E. Cohen and L. Pfeiffer, “Experimental Evidence of Bragg Confinement of Carriers in Quantum Barriers”, Appl. Phys. Lett., 61, 949-951 (1992).
  • Zolotoyabko, E. Jacobsohn, D. Shechtman, B. Kantor, and J. Salzman, “Acoustic Field Study in Layered Structures by means of X-Ray Diffraction”, J. Appl. Phys., 71, 3134-3137 (1992).
  • M. Zelikson, K. Weiser, J. Salzman and J. Kanicki, “Determination of Electron and Hole Mobilities in an a-Si:H from Photo-Electric Effects in a Waveguide Structure”, J. Non-Crystalline Solids, 137, 455-458 (1991).
  • M. Zelikson, K. Weiser, J. Salzman and J. Kanicki, “Threshold and Saturation Effects for Photosignals in an Amorphous Silicon Waveguide Structure”, Appl. Phys. Lett., 59, 2660-2662 (1991).
  • J. Salzman, G. Lenz, E. Baruch and E. Finkman, “Bragg Confinement of Carriers in a Shallow Quantum Well”, Appl. Phys. Lett., 59, 1958-1960 (1991).
  • B. Kantor, S. Zehavi and J. Salzman, “Phase Shifted Surface Acoustic Waves Resonator”, IEEE Trans. Ultrason. Ferroelec. Freq. Control, 39, 319-323 (1992).
  • N. Tessler, R. Nagar, G. Eisenstein, J. Salzman, U. Koren, G. Raybon, C.A. Burrus, “Distributed Bragg Reflector Active Optical Filters”, IEEE J. Quantum Electron., QE-27, 2016-2024 (1991).
  • G. Lenz and B. Ezra and J. Salzman, “Polarization Properties of Bragg Reflection Waveguides”, Optics Letters, 15, 1288-1290 (1990).
  • G. Lenz and J. Salzman, “Eigenmodes of Multiwaveguide Structures”, IEEE J. Lightwave Technol., LT-8, 1803-1809 (1990).
  • R. Besserman, J. Laborde, C. Cytermann, R. Brenner, J. Salzman and Yu. L. Khait, “Effect of Impurities on the Thermal Oxidation Process of InP”, Appl. Phys. Lett., 56, 919-921, (1990).
  • G. Lenz and J. Salzman, “Bragg Confinement of Carriers in a Quantum Barrier”, Appl. Phys. Lett., 56, 871-873, (1990).
  • G. Lenz and J. Salzman, “Bragg Reflection Waveguide Composite Structures”, IEEE J. Quantum Electron., QE-26, 519-531, (1990).
  • Yu. L. Khait, J. Salzman and R. Besserman, “Pressure Dependence of Semiconductor Laser Degradation”, Appl. Phys. Lett., 55, 1170 (1989).
  • J. Salzman and G. Lenz, “The Bragg Reflection Waveguide Directional Coupler”, IEEE Photonics Technol. Lett., 1, 319 (1989).
  • J. Salzman, Yu. L. Khait and R. Besserman, “Material Evolution and Gradual Degradation in Semiconductor Lasers and Light Emitting Diodes”, Electron. Lett. 21, 244-246 (1989).
  • Yu. L. Khait, J. Salzman and R. Besserman, “Kinetic Model for Material Structural Changes and Gradual Degradation in Semiconductor Lasers and Light Emitting Diodes”, SPIE Proceedings, Vol. 1038, 531-538 (1989).
  • G. Lenz and J. Salzman, “Bragg Reflection Waveguide Directional Couplers”, SPIE Proceedings, Vol. 1038, 63-74 (1989).